R. Nigro, R. Toro, G. Malandrino
Sep 1, 2004
Citations
0
Influential Citations
27
Citations
Journal
Journal of The Electrochemical Society
Abstract
A praseodymium adduct, Pr(hfa) 3 .diglyme [(H-hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentandione, diglyme = CH 3 O(CH 2 CH 2 O) 2 CH 3 )] has been synthesized. It has been applied as a Pr source for the metallorganic chemical vapor deposition (MOCVD) of praseodymium containing films on silicon substrate and compared with Pr(tmhd) 3 [(H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione)] precursor. Physical and thermal properties of both Pr(hfa) 3 .diglyme and Pr(tmhd)3 precursors have been fully analyzed and their efficacy as MOCVD precursors for the growth of praseodymium oxide films have been fully tested. Depending on the oxygen partial pressure (p O2 ), different praseodymium oxide phases have been obtained.