K. Fujino, Y. Nishimoto, N. Tokumasu
Aug 1, 1992
Citations
1
Influential Citations
11
Citations
Journal
Journal of The Electrochemical Society
Abstract
Hexamethyldisiloxane (HMDSO), a new organic silicon source, was studied for use in depositing high quality non-doped silicon dioxide for very large scale integrated device fabrication. The high vapor pressure, 20 mm Hg at 13 o C, makes it easier to use than other conventional sources, such as tetraethyorthosilicate (TEOS). A deposition rate of 0.1 μm/min at 400 o C with 2-6% ozone was obtained making it suitable for production oxide applications. Step coverage was found to be excellent and varied from conformal to «flow»-shaped with a 40 degree step angle