B. Vincent, R. Loo, W. Vandervorst
Sep 15, 2010
Citations
0
Influential Citations
28
Citations
Journal
Journal of Crystal Growth
Abstract
Abstract Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature ( 5 A/min). Trisilane permits the growth of Si at lower temperatures below 350 °C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 °C are defective, irrespective of the carrier gas, pressure and precursor flow used.