Seong-Min Jeong, K. T. Kim, Y. J. Yoon
Oct 15, 2012
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Influential Citations
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Journal
Journal of Crystal Growth
Abstract
Abstract Tetramethylsilane (TMS) is commonly used as a precursor in the production of SiC(β) films at relatively low temperatures. However, because TMS contains much more C than Si, it is difficult to produce solid phase SiC at high temperatures. In an attempt to develop a more efficient TMS-based SiC(α) process, computational thermodynamic simulations were performed under various temperatures, working pressures and TMS/H 2 ratios. The findings indicate that each solid phase has a different dependency on the H 2 concentration. Consequently, a high H 2 concentration results in the formation of a single, solid phase SiC region at high temperatures. Finally, TMS appears to be useful as a precursor for the high temperature production of SiC(α).