Omar F.Z. Khan, P. O’Brien
Jun 1, 1989
Citations
0
Influential Citations
29
Citations
Journal
Thin Solid Films
Abstract
Abstract Anhydrous zinc acetate (Zn(CH 3 COO) 2 ) has been used as a novel precursor for the growth of ZnO in a low-pressure metal-organic chemical vapour deposition reactor (MOCVD, 10 −4 Torr, 350–420°C). Possible mechanisms for this process are discussed in relation to the known chemistry of zinc acetate.