J. Misiewicz, K. Jezierski
1997
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Abstract
Publisher Summary Zinc arsenide (Zn3As2) is a member of the II-V group of semiconducting compounds. The noted optical properties of this material are not intensively studied, mainly because of the relatively high and temperature-independent concentration of holes in the range of 1017cm-3, which results in a very limited range of possible applications of Zn3As2 in semiconductor devices. Infrared optical processes are dominated by strong absorption when the photon energy decreases below 0.8 eV. Within this energy region, there are very intense intraband and defect-related transitions observed even at 5 K by Sujak-Cyrul et al. The measured optical spectra of Zn3As2 showed anisotropy, which is observed by Misiewicz et al for the fundamental absorption edge and in the reflectivity spectra within the visible and ultraviolet energy range. The measurements are generally performed at the room temperature by using x-ray oriented Zn3As2 single crystals obtained from a gas-transport growth method. Within the 0.9-1.0 eV energy range, a HgCdTe-based detector is used.