Searched over 200M research papers
10 papers analyzed
These studies suggest that grain boundaries in organic semiconductors can cause charge carrier traps, affecting charge transport and device performance.
6 papers analyzed
19 papers analyzed
Grain boundaries in organic semiconductors are critical to understanding charge transport mechanisms. These boundaries can act as barriers or traps for charge carriers, significantly impacting the performance of devices such as transistors, solar cells, and light-emitting diodes.
Grain Boundaries as Charge Carrier Traps:
Impact on Charge Transport:
Energy Barriers and Potential Drops:
Structural and Electronic Properties:
Models and Theoretical Understanding:
Grain boundaries in organic semiconductors are significant sources of charge carrier traps, which impede charge transport by introducing energy barriers and potential drops. The structural and electronic properties of these boundaries play a crucial role in determining the overall performance of semiconductor devices. Understanding and mitigating the effects of grain boundaries are essential for optimizing the efficiency of organic semiconductor-based devices.
Most relevant research papers on this topic